Saphira

Avalanche Photodiode Array

The Saphira detector is designed for high speed, photon starved infrared applications, such as wavefront sensing, fringe tracking, spectroscopy and even astronomical imaging.

Saphira has been designed specifically for HgCdTe avalanche photodiodes that can achieve gains of over 300x at very low dark current in the infrared band 0.8 to 2.5μm. The architecture is designed for flexibility to cover a wide range of applications. There are options for multiple independent windows for resetting and readout. The readout mode can be selected for the best noise reduction.

Flexible integration and readout modes
Multiple independently resettable windows
Selectable number of outputs up to 32
Variable avalanche gain
Voltage clamp function to minimize persistence
Frame rate up to 200 K frames per second with windowing
Wavelength tuned to application
Windowing function to 1 x 32 pixel
Combination of high sensitivity and high frame rate

Packaging Option

Currently offered in a 68 pin LC
Please contact us to discuss packaging options

Technical Specifications (Physical Parameters)

Array: 320 x 256 pixels
Pixel Pitch: 24 μm

Technical Specifications (ROIC Operation)

Reset modes: Global or rolling
CDS modes: Rolling or Read-Reset-Read per row
Control and operation: Single serial interface and clock
Power consumption: 30mW
Non-destructive readout: 1 e- glow per 1000 frames
Number of outputs: 4, 8, 16 or 32
Maximum frame rate: 3k frames per second
Windowing: Multiple window options
Avalanche gain control: Single –ve power supply up to 18V

Technical Specifications (Infrared Imaging)

Infrared sensor: HgCdTe avalanche photodiodes
Waveband for full gain: 0.8 to 2.5um (partial to 3.5um)
Typical read noise: 0.5 e- at a typical gain of x80
Noise figure: <1.2
Maximum gain: 300x
Operating temperature: 40 to 140K